NextGO Epi, a Berlin-based DeepTech startup developing Gallium Oxide epitaxial wafers for next-generation power semiconductor devices, has secured a €2
Engineering Reports, Volume 8, Issue 7, July 2026.
WASHINGTON, D.C. – The Department of Commerce’s CHIPS Program Office announced today the signing of a Direct Funding Agreement with Robert Bosch Semiconductor
Bosch startet in Roseville (Kalifornien) die Musterfertigung für SiC-Chips. Bis zu 225 Mio. US-Dollar Fördermittel aus dem US-Chip-Programm begleiten den Serienhochlauf.
The 860W DC/DC intermediate bus converter (IBC) delivers high efficiency, regulated output and peak power for AI server workloads.
Infineon Technologies AG and LS ELECTRIC have signed a Memorandum of Understanding (MoU) to collaborate on high-efficiency direct current (DC) power infrastructure solutions for AI data centers and next-generation power grids.
ABB has completed its acquisition of Italian transformer specialist Specialtrasfo. The transaction adds three production sites and specialised medium-voltage manufacturing capability.
(Bild: TAIYO YUDEN) 48 V vehicle electrical systems, driver assistance systems, and electrified drives are placing increasingly higher demands on power supply. With new hybrid aluminum electrolytic capacitors for up to 80 V and high ripple currents, Taiyo Yuden is responding to this trend.
physica status solidi (a), Volume 223, Issue 14, 22 July 2026.
Publication date: September 2026Source: Microelectronics Journal, Volume 175Author(s): Lilu Feng, Peng Sun, Yuxi Liang, Huayang Zheng, Ningyi Li, Mingrui Zou, Jiakun Gong, Ruihong Luo, Zheng Zeng
Publication date: 15 July 2026Source: Journal of Alloys and Compounds, Volume 1077Author(s): Xiangyun Zhang, Kewei Liu, Jialin Yang, Fuwang Zhou, Xing Chen, Yongxue Zhu, Zhen Cheng, Binghui Li, Dezhen Shen
ROHM has developed a new lineup of 600V Super Junction MOSFETs, the R60xxXNx and R60xxWNx series. . In the data
New 600V super junction MOSFETs improve thermal performance, reduce switching losses, and simplify second-source replacement, enabling compact, efficient power designs for AI servers, industrial systems, and inverters.
Publication date: February 2027Source: Electric Power Systems Research, Volume 263Author(s): Vassili Koklis, Pierre Henneaux
Publication date: January 2027Source: Electric Power Systems Research, Volume 262Author(s): Régulo E. Ávila-Martínez, Luis Rouco, Javier Renedo, Lukas Sigrist, Aurelio Garcia-Cerrada
Publication date: January 2027Source: Electric Power Systems Research, Volume 262Author(s): Oumar Diene, Nasim Rashidirad, Alireza Masoom, Seyed Masoud Mohseni-Bonab, Vincent Choinière
Publication date: January 2027Source: Electric Power Systems Research, Volume 262Author(s): Renwu Yan, Binghui Chen, Xinjie Lin, Shuhui Wu
Publication date: January 2027Source: Electric Power Systems Research, Volume 262Author(s): François Pacaud, Armin Nurkanović, Anton Pozharskiy, Alexis Montoison, Sungho Shin
Foxconn Chairman Young Liu recently revealed that one of the group's IC design subsidiaries is preparing for a Taiwan listing as early as 2026, potentially on the Taiwan Innovation Board. While Liu did not identify the company, industry observers believe the most likely candidate is Socle Technology Corp (Socle).
Mitsubishi Chemical and Japan Steel Works (JSW) plan to expand their gallium nitride (GaN) production capacity for next-generation power semiconductor substrates by 2027...
Publication date: 1 November 2026Source: Applied Energy, Volume 422Author(s): Ghulam Abbas, Hammad Alnuman, Mohammed Hatatah, Aamir Ali, Rameez Akbar Talani, Ezzeddine Touti