Universal and simplified, two- to 12-cell battery-charging system design using EZ-PD™ PMG1-B2 from Infineon Technologies
Rohm is licensing TSMC’s GaN process technology and installing it at its Hamamatsu fab. Rohm has been running a GaN process at Hamamatsu for four years,
Elevated photovoltaic fires draw attention: How to deal with the high-voltage DC risks?|Press Release Solarbe Globalsource
The new HWS3000GT4 adds 340–528 VAC three-phase input, 3 kW output, and full programmability for flexible industrial power applications.
TDK Corporation extends its X2 safety film capacitor portfolio with the new B3292xU/V series, now supporting higher voltages and offering compact lead spacings of 15 mm and 22.5 mm, with capacitance values from 47 nF to 1.8 µF. Rated at 350 V (AC) and
We recently concluded our international two-day project meeting for “Hybrid20 – Effective Construction of Hybrid Semi-Parametric Models for Model-Based Condition Monitoring and Accelerated Material Design.” Hybrid20 addresses key challenges in modern engineering and materials research to enable more robust condition monitoring as well as accelerated material design processes:Combining data-driven AI models (machine learning) with physics-based modelsEmbedding statistical uncertainty into simulations to account for measurement inaccuracies and imperfect sub-models (probabilistic modelling)Providing not only predictions (point estimates), but also a quantified measure of their reliability (uncertainty quantification) The project is led by Materials Center Leoben Forschung GmbH (MCL) and brings together strong interdisciplinary partners from TU Wien, TU Graz, Montanuniversität Leoben, FH JOANNEUM, Heidelberg University, and Linz Center of Mechatronics. It was great to see experts from materials science, computer science, signal processing, automation, industrial management, and computer engineering working closely together towards a shared goal: building hybrid models that are quick to construct and , physically meaningful and able to deal with varying levels of uncertainty. *** Internationales Projekttreffen – Hybrid2.0 Vor kurzem haben wir unser internationales zweitägiges Projekttreffen zum Projekt „Hybrid2.0 – Effective Construction of Hybrid Semi-Parametric Models for Model-Based Condition Monitoring and Accelerated Material Design“ erfolgreich abgeschlossen. Hybrid20 adressiert zentrale Herausforderungen der modernen Ingenieur- und Materialforschung, um ein robusteres Zustandsmonitoring sowie beschleunigte Materialentwicklungsprozesse zu ermöglichenKombination datengetriebener KI-Modelle (Machine Learning) mit physikbasierten ModellenIntegration statistischer Unsicherheit in Simulationen, um Messungenauigkeiten und unvollständige Teilmodelle systematisch zu berücksichtigen (probabilistische Modellierung)Bereitstellung nicht nur von Vorhersagen (Punktschätzungen), sondern auch einer quantifizierten Aussage über deren Verlässlichkeit (Uncertainty Quantification)Das Projekt wird von der Materials Center Leoben Forschung GmbH (MCL) geleitet und vereint starke interdisziplinäre Partner von TU Wien, TU Graz, Montanuniversität Leoben, FH JOANNEUM, der Universität Heidelberg sowie dem Linz Center of Mechatronics.Besonders beeindruckend war es zu sehen, wie Expertinnen und Experten eng zusammenarbeiten und das gemeinsame Ziel verfolgen, hybride Modelle zu entwickeln, die schnell aufsetzbar, physikalisch fundiert und zugleich in der Lage sind, mit unterschiedlichen Unsicherheitsniveaus souverän umzugehen.
Die TDK Corporation hat ihre AC-Folien-Kondensatoren der Sicherheitsklasse X2 um die neue Serie B3292xU/V für höhere Spannungen erweitert, die nun in kompakten Rastermaßen von 15 mm und 22,5 mm mit Kapazitätswerten von 47 nF bis 1,8 µF erhältlich ist.
These capacitors support EV on-board chargers, handle high current & voltage, last long, and provide reliable performance for EV charging systems.
STMicroelectronics has introduced MasterGaN6, beginning the second generation of the MasterGaN half-bridge family. The new power system in package couples an updated BCD driver with a high-performance GaN power transistor that has just 140mΩ RDS(on).
(Bild: Infineon Technologies AG) With new topologies, 300-mm manufacturing, and growing demand from AI data centers and electromobility, GaN is becoming the key technology of the next energy generation. However, behind the dazzling wafers, a tough race for cost leadership, production capacities, and system expertise is underway.
Gallium nitride (GaN) market to reach $3 billion by 2030, growing at 44% CAGR: Infineon Report
These DC link capacitors work up to 125°C without derating and handle high ripple current. Can they help EV and industrial converters run stable?
Save water, produce green energy, think big: These guiding principles have led Siemens’ KACO new energy GmbH and local partner Altitude to supply Israel’s largest floating solar park with power equ…
Infineon Technologies is phasing out the automotive GaN power devices it acquired with GaN Systems as it looks to introduce its own devices.
Gallium nitride (GaN) power devices often exhibit output voltage ringing during high-frequency switching due to parasitic parameters. Traditional forward-biased drive schemes not only struggle to effectively suppress this issue but also carry a high risk of false turn-on. Therefore, this study proposes three optimization measures based on the EZDrive architecture: (1) Optimizing passive RC network parameters to reliably generate a negative turn-off voltage at MHz-level frequencies; (2) Matching gate resistors with ferrite beads to synergistically suppress resonance; (3) Addressing variations in gate voltage tolerance across different GaN devices and compatibility with existing controllers by employing a diode clamping network to achieve adjustable clamping threshold gate voltage protection and level adaptation. To validate this approach, an LTspice simulation model was established based on the measured characteristics and datasheet parameters of the Infineon GS61008P enhancement-mode GaN HEMT, and tested at a frequency of 1 MHz. Results demonstrate that compared to traditional approaches, the proposed design actively generates a turn-off negative voltage, effectively suppressing false turn-on. It stably regulates Vgs within the −5 V to +7 V range, aligning with the device’s safe operating area of −10 V to +7 V. Voltage ringing duration decreased from >180 ns to
With this acquisition, Infineon expands its sensor business, enhancing automotive, industrial, and medical sensor capabilities.
The Global Silicon Carbide SiC Semiconductor Market reached US 810 2 million in 2024 and is expected to reach US 2 637 09 million by 2032 growing with a CAGR of 15 9 during the forecast period 2025 2032 Market ...
From 16–17 June 2026, MCL hosts the IC-MPPE Conference 2026 – Integrated Computational Materials, Process and Product Engineering in Leoben, Austria.This bi-annual event connects leading experts from industry and academia through the COMET research programme IC-MPPE managed by MCL:• Advanced methods and tools for IC-MPPE• IC-MPPE for circular advanced steels and alloys• IC-MPPE for railway vehicles and tracks• IC-MPPE for energy storage and conversion• IC-MPPE for reliability of electronic based systemsFree participation for IC-MPPE partners! Register by messaging ic-mppe2026@mcl.at.Learn more:
Global Leading Market Research Publisher QYResearch announces the release of its latest report Separately Excited DC Generators Global Market Share and Ranking Overall Sales and Demand Forecast 2026 2032 Executive Summary The Precision of Independence In an era dominated by ...
As the power electronics industry shifts from silicon IGBTs to SiC MOSFETs—driven largely by the efficiency demands of EV inverters, onboard chargers and DC fast charging—one persistent headache has been the gate driver. Legacy designs built around optocouplers and opto-emulators typically need significant rework to handle SiC’s faster switching speeds and higher noise immunity requirements.... Read more »
Infineon präsentiert die GaN Insights 2026: Prognosen, Anwendungen und technologische Fortschritte für Galliumnitrid-Leistungshalbleiter.
A conversation with Wise Integration executives on their digitally-controlled GaN technology and its use in next-gen data centers.The post Addressing next-generation AI infrastructure with software-defined GaN power architectures appeared first on Power Electronics News.
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